| abstract |
In the case of forming a silicon oxide film, a silicate glass film or the like used as an interlayer insulating film by high density plasma CVD, the film formation temperature is 400 ° C or higher and 680 ° C or lower, preferably 400 ° C or higher and 600 ° C or lower, more preferably 450 ° C. By setting it as 550 degrees C or less above, the plasma damage of these films is suppressed and the reliability is improved, suppressing the expansion of contact holes by the hydrofluoric acid treatment of the pretreatment of the embedding of the buried material after forming the contact holes in these films. |