| abstract |
Provided are a semiconductor device capable of suppressing diffusion of copper at an interface between a copper wiring and a cap film, to increase electromigration resistance, and to ensure reliability of the copper wiring and a manufacturing method thereof. The semiconductor device of the present invention includes an insulating film 12 formed on the substrate 11, a recess 13 (for example, a groove) formed in the insulating film, and a conductive layer embedded in the recess through the barrier layer 14. (15) and a cobalt tungsten phosphor film (16) which connects to the barrier layer on the conductive layer side and covers the conductive layer on the opening side of the recess. |