http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20020056659-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0206 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76227 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31055 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 2000-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7e183fb03830844490c5fe9673c39cf2 |
| publicationDate | 2002-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20020056659-A |
| titleOfInvention | Method for forming element isolating film of semicoductor device |
| abstract | The present invention relates to a method of forming a device isolation insulating film of a semiconductor device, comprising the steps of: sequentially forming a thermal oxide film and a nitride film on a semiconductor substrate; Forming a photoresist pattern for trench mask on the nitride film; Forming a trench by selectively patterning the nitride film, the thermal oxide film, and the semiconductor substrate using the photoresist pattern; Removing the photoresist pattern and forming a sidewall oxide film on an exposed surface of the trench; Removing the sidewall oxide film portion formed on the bottom surface of the trench; Forming a single crystal silicon layer on the bottom of the trench and oxidizing the single crystal silicon layer through a thermal process; Forming a high density plasma oxide film on the surface of the entire structure including the oxidized single crystal silicon layer and then planarizing it; And removing the nitride film and the thermal oxide film. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100822620-B1 |
| priorityDate | 2000-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.