| abstract |
It is possible to develop a small quantity of various kinds of semiconductor devices in a short time and to realize an optimal photomask for manufacturing at low cost.n n n The light shielding pattern 2 of the photomask M was formed by containing particulate matter such as carbon in an organic film such as a photoresist film or the like. The pattern is transferred to the photoresist 6 on the semiconductor wafer 5 by the reduction projection exposure process using the photomask M. FIG. In this exposure process, as the exposure light 3, exposure light can be selected in a wide wavelength range, such as i line | wire, KrF excimer laser, and ArF excimer laser light. |