http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20020052739-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-482 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2000-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11cc1da8a73664e2470216ebf556fb3a |
| publicationDate | 2002-07-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20020052739-A |
| titleOfInvention | Method for fabricating fine conducting lines of semiconductor memory device |
| abstract | The present invention provides a method for forming a fine wiring of a semiconductor memory device, comprising: forming a thermal oxide film on a silicon substrate; Forming a nitride film on the thermal oxide film; Patterning the nitride film in a predetermined pattern such that a predetermined portion of the substrate is exposed; Forming a CVD oxide film spacer on a side surface of the nitride film pattern; Implanting ion into the exposed substrate to form a buried bit line; And removing the oxide film and the nitride film. |
| priorityDate | 2000-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.