http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20020051155-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288 |
| filingDate | 2000-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91e97965b5cfb6d3b5c1bc5e526ac206 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_630f5e22d548c9470a4ede16956ec561 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_278f6e5cafffec146a3a59f1b64e02f2 |
| publicationDate | 2002-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20020051155-A |
| titleOfInvention | Method for manufacturing Cu wiring using electroplating for semiconductor device. |
| abstract | A copper wiring manufacturing method of a semiconductor device using the electroplating method is disclosed. An aspect of the present invention is to form an insulating film pattern having at least two or more types of trenches, such as a first trench and a second trench having a wider width than the first trench. A seed layer is formed on the insulating layer pattern, and a first copper layer filling a first trench having a relatively narrow width from the bottom to the top is formed on the seed layer by a first electroplating process. That is, the first copper layer is formed for the purpose of gap filling of the first trench having a narrow width. A second copper plating process is performed on the first copper layer to fill the second trench partially filled by the first copper layer by a second electroplating process performed under a conformal growth condition compared to the first electroplating process. . That is, in order to improve the uniformity, the second copper layer is grown by growth. The second copper layer is planarized to form a copper wiring separated in the first trench and the second trench. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100826784-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100559041-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10269629-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100788352-B1 |
| priorityDate | 2000-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID418354341 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23978 |
Total number of triples: 20.