| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-0335 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76837 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2000-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c12ee282475891baaad6cddf001067cd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_85aee359004e2e78472c9053471ca226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c184caa5d82e1840d3289416b9222b5 |
| publicationDate |
2002-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20020045869-A |
| titleOfInvention |
Method for forming contact hole and spacer of semiconductor device |
| abstract |
The present invention can prevent contact failure due to mask misalignment, prevent voids from occurring in an interlayer insulating film between neighboring conductive film patterns, and reduce parasitic capacitance between conductive film patterns. The present invention relates to a method of forming a hole and a spacer, and the present invention provides a method for depositing an interlayer insulating film immediately after forming a conductive film pattern such as a gate electrode and a bit line, and defining a contact hole pattern of at least one of a straight line, a T-shape, or an I-shape. The insulating film spacer is formed on the sidewalls of the conductive film pattern after the contact hole is formed by etching using the mask or in the process of forming the contact hole. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100689677-B1 |
| priorityDate |
2000-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |