| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate |
2000-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da5087578035fa4c89d81985f6ae33b2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c5b22538e002f0c1a3b9adc7f402746c |
| publicationDate |
2002-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20020043020-A |
| titleOfInvention |
Insulator layer of semiconductor device and method for forming the same |
| abstract |
Provided are an interlayer insulating film of a semiconductor device having excellent low dielectric constant characteristics and a method of forming the interlayer insulating film. The interlayer insulating film is formed between the metal wirings, a porous silica film having excellent low dielectric constant characteristics is formed, and a SiOxCyHz film having a dielectric constant of 2.7 is deposited as a hard mask film and a lower mask film, respectively, on and under it. |
| priorityDate |
2000-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |