http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20020035982-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ae372ddaa494f2face39592b0429cc16 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28185 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28202 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-511 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
filingDate | 2000-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b433e7de4273bdec29c0eaa58689caf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_547871521652dcdf0223b0528a85b16d |
publicationDate | 2002-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-20020035982-A |
titleOfInvention | Method for forming gate of semiconductor device |
abstract | A method of forming a gate including a high dielectric constant gate insulating film is disclosed. The gate forming method of the present invention comprises the steps of: forming a silicon oxide film to which nitrogen is added on a silicon substrate; Depositing a metal layer on the nitrogenous silicon oxide film; And heat treating the metal layer, wherein the metal layer comprises nitrogen-containing silicon oxide film / metal oxide insulating film / metal gate electrode. According to the present invention, it is possible to fabricate a semiconductor device having excellent leakage current characteristics and capable of preventing mobility reduction during device application. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100823712-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101377170-B1 |
priorityDate | 2000-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.