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filingDate 2000-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b433e7de4273bdec29c0eaa58689caf
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publicationDate 2002-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20020035982-A
titleOfInvention Method for forming gate of semiconductor device
abstract A method of forming a gate including a high dielectric constant gate insulating film is disclosed. The gate forming method of the present invention comprises the steps of: forming a silicon oxide film to which nitrogen is added on a silicon substrate; Depositing a metal layer on the nitrogenous silicon oxide film; And heat treating the metal layer, wherein the metal layer comprises nitrogen-containing silicon oxide film / metal oxide insulating film / metal gate electrode. According to the present invention, it is possible to fabricate a semiconductor device having excellent leakage current characteristics and capable of preventing mobility reduction during device application.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100823712-B1
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type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 26.