| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76835 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31612
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7681
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02208 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 |
| filingDate |
2001-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a07e28f9404275b528a7832c8556fa48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ac403b38b142e2ce65d41a9ae257430b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7cb5bf81e331188c23d218b365857d18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ff42771df6f4487c23c49f5542c20f7f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3b22b8c6d24b61c10fa249ceda87921 |
| publicationDate |
2002-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20020033577-A |
| titleOfInvention |
Method of depositing organosilicate layers |
| abstract |
A method of forming an organosilicate layer is disclosed. The organosilicate layer is formed by applying an electric field to a gas mixture containing an organosilane compound and an oxygen containing gas. The organosilicate layer is suitable for integrated circuit fabrication processes. In one integrated circuit fabrication process, an organosilicate layer is used as the intermetal dielectric layer. In other integrated circuit fabrication processes, the organosilicate layer is included in the damascene structure. |
| priorityDate |
2000-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |