| abstract |
A method for treating a substrate, the method comprising: depositing a dielectric layer comprising silicon, oxygen, and carbon on the substrate by chemical vapor deposition; and depositing a silicon and carbon containing layer on the dielectric layer. And the dielectric layer contains at least 1 atomic percent carbon and has a dielectric constant of less than about 3. The dielectric constant of the dielectric layer deposited by reaction of an organosilicon compound having three or more methyl groups is significantly reduced by further depositing an amorphous hydrogenated silicon carbide layer by reaction of alkylsilane in a plasma of a relatively inert gas. . |