| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_930d026de3a6f8109fa00a85852fe8e4 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02118
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0212
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3143
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3127
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02266 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-33
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0805
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01G4-258 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G4-33
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01G4-258 |
| filingDate |
2001-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_84351e30fddb373a0ff80634673481f7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f3ba43fbaf4fc6717f5a1472b7a8e68
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3f12ac4bd1654e965fac30f6d9993ff1 |
| publicationDate |
2002-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20020017983-A |
| titleOfInvention |
Thin film condensor for compensating temperature |
| abstract |
The thin film capacitor of arbitrary capacitance temperature coefficient is realized by using only two types of dielectric thin film materials.n n n A dielectric thin film (3) having a predetermined capacitance temperature coefficient is formed on the upper surface of the lower electrode (2) provided on the substrate (1). A second dielectric film 4 having a capacitance temperature coefficient different from the predetermined capacitance temperature coefficient is formed while covering the stepped portion of the dielectric thin film 3 from the top edge portion to the dielectric thin film 3, And the second dielectric film 4 are covered with the upper electrode 5. The area of the overlapped area between the dielectric thin film 3 and the second dielectric film 4 between the lower electrode 1 and the upper electrode 5 is adjusted to set the capacitance temperature coefficient. |
| priorityDate |
2000-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |