http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20020009098-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76804 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2000-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_263aad5c6ecab0b3a8b1c43a7acd33d9 |
| publicationDate | 2002-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20020009098-A |
| titleOfInvention | Method for forming via hole of semiconductor device |
| abstract | The present invention relates to a method of forming a via hole using dry etching, wherein an interlayer insulating film is formed by sequentially stacking a first PE-TEOS film, a flowable oxide film, and a second PE-TEOS film on a semiconductor substrate on which a first metal wiring is formed. . A via hole is formed by dry etching the interlayer insulating layer so that the first metal wiring is exposed using the photoresist pattern as an etching mask. RF etching the via hole openings allows the upper diameter of the via hole to extend relative to the lower diameter. According to this method, since only dry etching is used to form the via holes, defects may be prevented from occurring in the interlayer insulating film, and process steps may be reduced. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100707576-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11776962-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10879244-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11329044-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110880503-A |
| priorityDate | 2000-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.