| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31133
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02071
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-426 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2001-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2001-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20010113000-A |
| titleOfInvention |
Method of manufacturing semiconductor device |
| abstract |
The removal of the resist residues in the Al wiring step and the like can all be performed with a single chemical agent.n n n As a treatment liquid for resist removal or resist residue removal, a chemical agent containing an organic acid or a salt thereof and water and having a pH of less than 8 is used. |
| priorityDate |
2000-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |