http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20010112653-A

Outgoing Links

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filingDate 2001-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2001-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20010112653-A
titleOfInvention Method for fabricating semiconductor devices
abstract The present invention eliminates the step on the base member caused by the residual plating seed layer that remained at the portion where the electrode is in contact with the electropolishing solution and prevents contact with the electrolytic polishing liquid. It is to provide a method for manufacturing a semiconductor device that can be used. The method comprises the steps of forming a plating seed layer on the base member, forming a plating film on the plating seed layer in a region excluding the outer periphery of the base member by the plating process, and plating the plating seed layer by the electrolytic solution polishing process. And polishing with the surface, and selectively removing the plating seed layer remaining on the outer circumference of the base member.
priorityDate 2000-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 29.