| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28568 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-75 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 |
| filingDate |
1999-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2001-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20010109274-A |
| titleOfInvention |
Capacitor electrode structure |
| abstract |
The present invention relates to a microelectronic structure in which an oxygen containing iridium layer 25 is disposed between the silicon containing layers 8, 20 and the oxygen barrier layer 30. The iridium layer can be produced with a low oxygen content in an oxygen containing atmosphere by the sputtering method. The oxygen-containing iridium layer 25 is stable up to a temperature of 800 ° C. and inhibits the formation of iridium silicide in contact with the silicon-containing layer 20. Microelectronic structures in this manner are preferably used in semiconductor memories. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100422594-B1 |
| priorityDate |
1998-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |