http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20010109033-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76828 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76876 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76264 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02598 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254 |
| filingDate | 2000-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bfcf6e4c488da7195b02c0d1bd60024e |
| publicationDate | 2001-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20010109033-A |
| titleOfInvention | Method for fabricating soi wafer |
| abstract | The present invention discloses a method for manufacturing a SOI wafer, and the method for manufacturing a SOH wafer of the present invention, comprising: providing a first silicon substrate having an ion implantation mask formed on a front surface thereof; Implanting oxygen ions into the exposed portion of the first silicon substrate; After removing the ion implantation mask, forming a single crystal silicon layer on the first silicon substrate; Etching the single crystal silicon layer and the portion of the first silicon substrate into which the oxygen ions are not implanted to form grooves, and forming device isolation layers by embedding an oxide film in the grooves; Forming a first insulating film on the resultant product; Providing a second silicon substrate having a second insulating film formed on a front surface thereof; Bonding the first silicon substrate and the second silicon substrate; Heat treating the bonded substrates to form a first silicon oxide layer formed by the oxygen ions; Polishing a rear surface of the first silicon substrate to a portion adjacent to the first silicon oxide layer; Etching the back surface of the first silicon substrate using the first silicon oxide layer and the device isolation layer as an etch stop layer; Removing a portion of thicknesses of the first silicon oxide layer and the device isolation layer; Oxidizing the exposed first silicon substrate to form a second silicon oxide layer; And etching a part thickness of the second silicon oxide layer and the device isolation layer. |
| priorityDate | 2000-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.