| abstract |
Even when the lower layer wiring is covered with the etching protective film, high aspect ratio grooves and holes are formed in the low dielectric constant methylsiloxane film without causing poor conduction due to shape deterioration.n n n The laminated film in which the silicon oxide film 7 was formed is formed on the upper layer of the methylsiloxane film 6, and this laminated film is processed using the hard mask 8. As shown in FIG.n n n When etching the etching protective film 5, the silicon oxide based film 7 acts as a hard mask of the methylsiloxane based film 6, thereby preventing the inclination of the shoulder portion to be transferred to the methylsiloxane based film 6, The parasitic capacitance of the multilayer wiring can be reduced without causing disconnection or short circuit. |