http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20010102794-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5ad8562c578b061df7a2c3aee9d0e24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ae372ddaa494f2face39592b0429cc16 |
| filingDate | 2000-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4420af2b4ccca439634450fe4005a126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7bbec02aa5ad229f5d5fcdd2186e36a4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8afd4518374f33f06a12636f73298ffe http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_221be91d8675da3679bddcfb082f3e88 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_88a87b98e14916a2aed01a3b84987c7a |
| publicationDate | 2001-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20010102794-A |
| titleOfInvention | Method for manufacturing a high quality thin film by post-growth annealing in oxygen ambient |
| abstract | The present invention relates to a method for manufacturing a high-quality zinc oxide (ZnO) oxide semiconductor thin film, which is a key technology for the fabrication of optoelectronic devices such as blue and green light emitting diodes (LEDs) and laser diodes (LDs). .n n n According to the present invention, a zinc oxide (ZnO) oxide semiconductor, which has recently been spotlighted as a next-generation light emitting diode material, is subjected to post-growth annealing treatment under a specific gas atmosphere rather than a thin film manufacturing method according to a simple change of existing growth conditions. It is characterized by producing a zinc oxide thin film excellent in electrical, structural and optical properties. Accordingly, the present invention improves the structural characteristics by growing the anti-epitaxial thin film with a sputter system and heat-treating the thin film under a high temperature oxygen atmosphere to induce grain rearrangement. Oxygen injection by reducing the oxygen vacancies (vacancy) in the zinc oxide thin film can realize a thin film excellent in electrical and optical properties. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100626822-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100705995-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100693407-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100546594-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20110027470-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100514232-B1 |
| priorityDate | 2000-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.