http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20010098918-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1345 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-13458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136227 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1345 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-77 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1362 |
| filingDate | 2001-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2001-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20010098918-A |
| titleOfInvention | Method of manufacturing thin film transistor panel having protective film of channel region |
| abstract | The present invention relates to a method of manufacturing a thin film transistor panel applied to an active matrix liquid crystal display device and the like,n n n Since the protective film 33 for protecting the channel region of the thin film transistor 8 is formed by dry etching, no pinhole is formed in the gate insulating film 31 even when the semiconductor film 32 is bonded, and thus the gate electrode ( It is characterized in that the insulation breakdown voltage of the gate insulating film 31 can be prevented from being lowered even when the scan signal line 9 or the like including G) is formed only by the Al-based metal film having no anodic oxide film on the surface. |
| priorityDate | 2000-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.