| abstract |
The HMDS gas is supplied to the surface of the wafer W for hydrophobization treatment, and the wafer is then housed in an airtight container on the cassette stage and conveyed to an analytical device outside the resist pattern forming apparatus. In the analysis device, for example, mass spectrometry is performed on the amount of ionic species such as CH 3 Si + , C 3 H 9 Si + , and C 3 H 9 OSi _ on the surface of the wafer W in an analysis unit such as TOF-SIMS. Based on this, the amount of HMDS (hexamethyl disilazane) on the surface of the wafer W is measured. In this method, the amount of HMDS on the wafer surface can be measured, and the hydrophobization state can be evaluated with high reliability. |