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filingDate 2001-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35452fd485343037fa3a43a7e6e87df9
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publicationDate 2001-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20010088439-A
titleOfInvention Semiconductor device having resist as buffer layer
abstract The semiconductor device includes a top layer and a buffer layer. The buffer layer comprises a resist. In one embodiment, the passivation layer is disposed over the top layer. The buffer layer is preferably rotated over the passivation layer and is preferably a photo-definable and compliant resist. The buffer layer and the passivation layer define at least one window that exposes the bond pads disposed on the top layer.
priorityDate 2000-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 27.