http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20010084063-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F02M35-0209 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F02M35-024 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2000-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3f6b8f566ddd56c0a87804b70c622764 |
| publicationDate | 2001-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20010084063-A |
| titleOfInvention | Method for fabricating of pattern |
| abstract | The present invention is to provide a pattern forming method that can ensure the resolution and process margin of the resist and has a stable resist etch profile, forming a lower resist on the substrate film, the silicide on the upper surface of the lower resist Forming a region, applying and patterning an upper resist on the silicide region, etching the silicide region and the lower resist to a predetermined depth using the patterned upper resist as a mask, and After oxidizing the region, etching the lower resist to expose the substrate film with a mask. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100870326-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100913000-B1 |
| priorityDate | 2000-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.