http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20010081705-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-06131 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-03 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60 |
filingDate | 2000-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a605f411c2224ed976edde6e796f2357 |
publicationDate | 2001-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-20010081705-A |
titleOfInvention | Manufacturing method for pad in semiconductor device |
abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a pad of a semiconductor device. In the conventional method of forming a pad of a semiconductor device, a bonding pressure applied when bonding a wire to a pad is formed by forming a plug connected to a metal wiring at a lower side of the pad. There was a problem that the pad is broken due to this dispersion, the reliability of the process is lowered and the yield of the product is lowered. In view of the above problems, the present invention includes the steps of depositing an interlayer insulating film on the upper surface of the field oxide film formed on a portion of the substrate; Forming a lower metal layer on an upper surface of the interlayer insulating film; Depositing a metal interlayer insulating film on an upper surface of the lower metal layer, and forming a plurality of contact holes to evenly expose a part of the front surface of the deposited lower metal layer through a photolithography process; Forming a conductive plug in the contact hole; Forming an upper metal layer on top of the interlayer insulating film and the plug to form a plurality of plugs connecting the pad and the metal wiring to contact the front surface of the pad so as to properly apply pressure applied when bonding wires to the pad. By dispersing, the pad is prevented from being crushed by the pressure, thereby improving the reliability of the semiconductor device and improving the yield of the product. |
priorityDate | 2000-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Predicate | Subject |
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isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID190217 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559572 |
Total number of triples: 14.