http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20010081063-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-0383 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-395 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| filingDate | 1999-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2001-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20010081063-A |
| titleOfInvention | Dram cell arrangement and method for the production thereof |
| abstract | The present invention relates to a DRAM-cell device and a method of manufacturing the device. Each memory cell includes one transistor and one capacitor. The memory node Sp of the capacitor is disposed inside the first groove V, while the gate electrode of the transistor is disposed inside the second groove. The upper source / drain-region SDo, the channel region KA, and the lower source / drain-region SDu of the transistor are overlapped up and down, respectively, and each of the first side Fa of the first groove V is disposed. It is adjacent to the second groove as well. At least a portion of the first side Fa is provided with capacitor dielectrics Ka and Kb comprising recesses in the range of the lower source / drain-region SDu, wherein the memory node Sp is connected to the lower source / drain. Adjacent to the drain-region SDu. The second groove of the first memory cell may be adjacent to the memory node Sp disposed in the first groove V of the second memory cell. The second groove may be a portion of the word line trench GW that extends laterally with respect to the isolation trench. Above the recesses in the first grooves V, one insulating structure Ia is preferably arranged adjacent to two insulating trenches adjacent to each other. |
| priorityDate | 1998-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.