http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20010081049-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8221 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0688 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-41 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 |
| filingDate | 1999-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2001-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20010081049-A |
| titleOfInvention | Semiconductor device having shared gate electrode and fabrication thereof |
| abstract | Provided are semiconductor devices having a gate electrode shared by two sets of active regions, and a method of manufacturing the same. In one embodiment, a first substrate is provided and a gate electrode is deposited on the first substrate. The second substrate is deposited on the gate electrode. A first set of active regions is deposited on a portion of the first substrate near the gate electrode, and a second set of active regions is deposited adjacent to the second substrate and on top of the gate electrode. Two sets of active regions are connected together Or may be used separately. |
| priorityDate | 1998-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID82850 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419520408 |
Total number of triples: 19.