http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20010071697-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-56 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78391 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-516 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40111 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 |
| filingDate | 2000-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2001-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20010071697-A |
| titleOfInvention | Ferroelectric field effect transistor having compositionally graded ferroelectric material and method of making the same |
| abstract | The nonvolatile non-destructive read ferroelectric FET memories 10, 40, 60, 80, 100, 110, 120, 130 and 160 include a semiconductor substrate 19, a ferroelectric functional spherical (" FGM ") thin film 26, , 90, 20, 140, and 170, and a gate electrode 30. In the first embodiment, the ferroelectric FGM thin films 26, 50, 70, 90, 20, 140, and 170 contain a ferroelectric compound and a dielectric compound. The dielectric compound has a lower dielectric constant than the ferroelectric compound. There is a concentration gradient of the ferroelectric compound in the thin film. In the second basic embodiment, the FGM thin films (26, 50, 70, 90, 20, 140, and 170) are functionally graded ferroelectrics (" FGF ") in which the hysteresis behavior of the ferroelectric compound is free of hysteresis. The free hysteresis behavior of the FGF thin film is related to the enlarged memory window of the ferroelectric FET memory. The FGM thin films 26, 50, 70, 90, 20, 140, 170 are preferably formed using the liquid source MOD method, and a multi-source CVD method is also preferred. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100491417-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10903363-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2008082047-A1 |
| priorityDate | 1999-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 78.