http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20010070501-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fcc0b66123940d1b32783569ebfa2d45 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F3-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-14 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-02 |
| filingDate | 2001-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_099904b8028bc7bfbacb479230eba164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_55376e1837da0b73561c2a0779c62c21 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c5d56c6c033d9fd7b104c7056105aba http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8382f19a5bb23f13b53ac198ffadc45b |
| publicationDate | 2001-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20010070501-A |
| titleOfInvention | Aqueous Dispersion for Chemical Mechanical Polishing and Chemical Mechanical Polishing Process |
| abstract | The present invention provides an aqueous dispersion for CMP that can polish each copper film and barrier metal film efficiently, and at the same time obtain a sufficiently flat finish surface without excessively polishing the insulating film, and a CMP method using the same. In the aqueous dispersion for CMP of the present invention, when the copper film, the barrier metal film and the insulating film are polished under the same conditions, the ratio of the polishing rate (R Cu ) of the copper film to the polishing rate (R BM ) of the barrier metal film (R BM ) Cu / R BM) is 0.5≤R Cu / R BM ≤2, and wherein the copper film polishing rate (R Cu) and the ratio (R Cu / R in) of the polishing rate (R in) of the insulating film is 0.5≤R Cu / R In ≤2 characterized in that. In addition, another CMP aqueous dispersion of the present invention contains an abrasive, a heterocyclic compound, an organic acid and an oxidizing agent. When the copper film, barrier metal film and insulating film are polished under the same conditions, The ratio (R Cu / R BM ) of the polishing rate (R Cu ) and the polishing rate (R BM ) of the barrier metal film is 0 <R Cu / R BM ≤5, and the polishing rate (R In ) of the insulating film and polishing of the barrier metal film And the ratio R In / R BM of the speed R BM is 0 <R In / R BM ≤2. The CMP method of the present invention is characterized by using these aqueous dispersions for CMP in the second step in two-step polishing, the second step in three-step polishing, or the third step in three-step polishing. |
| priorityDate | 2000-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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