| abstract |
A method and apparatus are provided that are suitable for organometallic chemical vapor deposition of lead zirconate titanate on a substrate. Methods for forming PZT films include vaporizing, vaporized lead bis (tetramethyl heptanedionate), zirconium bis (tetramethyl heptanedionate) bis (isopropoxy) and titanium bis (tetramethyl heptane). Diionate) bis (isopropoxy) is introduced into the chamber. The apparatus comprises a CVD chamber having a gas distribution system and a substrate support, at least one vaporizer fluidically connected to the gas distribution system of the CVD chamber, an oxygen gas source fluidly connected to the gas distribution system of the CVD chamber, It is fluidly connected to the at least one vaporizer and consists of at least one precursor source consisting of Pb (thd) 2 , Zr (OiPr) 2 (thd) 2 and Ti (OiPr) 2 (thd) 2 . |