| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_950bce8d103dab1bd282965fde47f9f3 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32422
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32174
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32871
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32311 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01J19-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-223
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-04 |
| filingDate |
2000-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_741e9242abcfc1dd646f20d3bcd6fc88
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d994b70922573500d6fb91326ed783e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_44b079aeeb9abfc4375e7e58ac27a313 |
| publicationDate |
2001-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20010062546-A |
| titleOfInvention |
Pretreatment process for plasma immersion ion implantation |
| abstract |
A method for use in a plasma immersion ion implantation system for implanting a substrate (W) having a patterned photoresist (P) on its surface is provided. In this method, the primary gas is ionized in the chamber 12 to generate electrically inert ions, and the ions are reacted with the photoresist P to generate a gas discharge 64. The outgassed material 64 is continuously discharged until the outgassing is substantially complete. The method further includes ionizing the secondary gas to produce electrically active ions, implanting positively charged ions of the ions into the substrate, and further discloses a method of curing the photoresist prior to ion implantation. . The gas is ionized in the chamber 12 to produce positively charged electrons. These electrons are first attracted to a substrate in a chamber having a photoresist with a pattern formed on the surface to cure the photoresist. The positively charged ions are then implanted into the substrate W where photoresist gas evolution is substantially prevented. |
| priorityDate |
1999-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |