Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_03d0f52bb4069f8a19d70dcfb697c67a |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 |
filingDate |
2000-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4777e38204f9f24001cd48b964f0099c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_601ba4a71019c4ad5d4dff3748ba6624 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_abf92c6162f276a54a5782dd87f205c1 |
publicationDate |
2001-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-20010062443-A |
titleOfInvention |
Positive resist composition |
abstract |
It is an object of the present invention to provide excellent resolution and resolution in the above ultra-fine photographic manufacturing process using far ultraviolet light, especially ArF excimer laser light, and excellent resolution and pattern even after a long time until post-heating after exposure. A profile is obtained and it is to provide a positive resist composition with small density dependency.n n n The present invention comprises a positive resist composition containing a polymer having a repeating structural unit having a specific structure different from two or more kinds of photoacid generators having a specific structure and having a group decomposed by the action of an acid. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100913732-B1 |
priorityDate |
1999-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |