http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20010061495-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
| filingDate | 1999-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa8a7a8642976a7189512bf8aa18f344 |
| publicationDate | 2001-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20010061495-A |
| titleOfInvention | SiBC film for interlayer insulation film in a semiconductor device and method of forming a metal wiring using the same |
| abstract | The present invention relates to a silicon boride carbide film for an interlayer insulating film of a semiconductor device and a metal wiring forming method using the same. The boronated silicon carbide film uses any one of silane, silane compound, silicon compound, and silicon carbide compound as a raw material gas, and a boron compound such as any one of B 2 H 6 or B (CH 3 ) 3 as a raw material of boron. It is formed by deposition by a plasma method. The silicon boron carbide film has a low dielectric constant without loss in the etching prevention film properties. When the silicon boride carbide film having such properties is applied as an etching prevention film in a wiring process in which the damascene etching method is applied, the parasitic capacitance of the film itself is reduced. It is possible to reduce the effective effective parasitic capacitance of the multi-layered metal interlayer insulating film containing silicon boride carbide film, thereby improving the time constant (RC) delay characteristics of the device due to parasitic capacitance. . |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113223998-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113223998-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11749601-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100680499-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100417687-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114188302-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100453957-B1 |
| priorityDate | 1999-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 46.