| abstract |
The present invention relates to an anti-reflective polymer and a method for manufacturing the same in the manufacturing process of a semiconductor device, and more particularly to the reflection of a lower layer layer in an ultra-fine pattern forming process using a photosensitive film for lithography using 193 nm ArF and 248 nmKrF lasers. And anti-reflective polymer designed to contain chromophores with high absorbance so that absorption occurs at wavelengths of 193 nm and 248 nm to prevent standing waves in the thickness change of light and photoresist itself. . When the polymer according to the present invention is used in the semiconductor manufacturing process, the stability of 64M, 256M, 1G, and 4G DRAMs is eliminated by eliminating CD variations resulting from standing waves, reflections, and underlayers due to optical properties of the underlying layer on the wafer and thickness variation of the photoresist layer. It is possible to form an ultra-fine pattern can increase the yield of the product. |