| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f481982f9992cbb527a6d31589832958 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31695
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3146 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31604 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-509
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-30 |
| filingDate |
2000-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a4974bf47291f8cea29fd39b6892fcc5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c2d0dc46ce06bfc7d7eba92ed82543fc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e0a6b1fc87608067a54b937d1091cb56 |
| publicationDate |
2001-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20010052004-A |
| titleOfInvention |
Surface treatment anneal of silicon-oxy-carbide semiconductor surface layer |
| abstract |
The present invention discloses a method for surface treatment of semiconductor surfaces and semiconductor products. The deposited semiconductor surface layer is treated and annealed in an alkyl environment of the chemical vapor deposition chamber and the semiconductor surface layer is passivated by bonding an alkyl terminal chemical species attached to the surface of the semiconductor surface layer with silicon to assist in the removal of hydroxyl groups from the surface. The semiconductor surface layer comprises a polysilicon-oxy-carbide surface layer having a carbon content of about 5 to about 20% and a dielectric constant of about 2.5 to about 3.0 at the molecular level. |
| priorityDate |
1999-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |