http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20010051801-A

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filingDate 2000-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e064bb1e5eed204cf419adedf73ec576
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c64b3ea34549fe09e64bf7bab53da5b
publicationDate 2001-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20010051801-A
titleOfInvention Hardware design, system configuration and process sequence for improved seed layer productivity and achieving 3mm edge exclusion for a copper metalization process on semiconductor wafer
abstract The present invention generally provides an apparatus and method for electrochemically depositing a metal layer on a substrate to have high productivity and minimal edge exclusion. The present invention includes depositing a full coverage seed layer over a substrate; Electrochemically depositing a metal layer over the seed layer; And removing the seed layer exposed from the annular edge portion of the substrate. The invention also provides an electrochemical deposition cell having a cathode contact member adapted to contact the periphery of the substrate within about 3 mm from the substrate edge, and a process cell adapted to remove the seed layer exposed on the periphery of the substrate; And a transfer chamber having a robot adapted to transfer the substrate between the electrochemical deposition cell and the process cell for removing the exposed seed layer.
priorityDate 1999-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 31.