| abstract |
The present invention relates to a method for producing an aluminum nitride thin film by greatly improving the surface flatness and chemical and electrical properties of the thin film by performing nitrogen plasma treatment on the aluminum nitride thin film.n n n According to the present invention, it is possible to improve the flatness, chemical and electrical stability of the thin film at a lower temperature and a shorter time than the conventional method, thereby satisfying the condition of aluminum nitride as a piezoelectric substrate material when manufacturing a surface acoustic wave device. It is also expected to be able to function excellently when used as a buffer layer of gallium nitride. In addition, when used as an optical device, as the surface becomes flat, light scattering may be prevented, and as the chemical stability increases, it is expected to play a big role in preventing corrosion even when used as an actual protective film. |