http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20010038538-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ae372ddaa494f2face39592b0429cc16 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-04 |
| filingDate | 1999-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e61e424b412de5a8e83582e8a07f6b07 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3e89a5e00d012426beefa402ee93e32 |
| publicationDate | 2001-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20010038538-A |
| titleOfInvention | Silicon nitride film comprising amorphous silicon quantum dot nanostructure embedded therein and light emitting diode containing same |
| abstract | The present invention relates to a silicon nitride thin film comprising a silicon nitride substrate and an amorphous silicon quantum dot microstructure formed in the substrate, wherein the silicon light emitting device employing the thin film can be manufactured using existing silicon semiconductor technology. It is excellent in luminous efficiency and can emit light in the visible light region including short wavelength regions such as green and blue. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2007066854-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7772587-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170044316-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100818311-B1 |
| priorityDate | 1999-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.