http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20010033554-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-891 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02299 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02197 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31691 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-40 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-04 |
| filingDate | 1998-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2001-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20010033554-A |
| titleOfInvention | Method for deposition of ferroelectric thin films |
| abstract | The present invention relates to a nucleation deposition method in which a ferroelectric thin film is controlled by chemical vapor deposition in a novel process procedure, wherein a high density nucleation region has a ferroelectric thin film having excellent properties with a controllable and reproducible rough surface. By the use of a substrate member that has been treated in a predetermined manner for manufacture, by the use of a chemically modified substrate surface whose chemical properties of the surface are modified by the formation of an alloy, or by the formation of a large number of nucleations during the start of deposition This is accomplished by having chamber conditions that pressurize the precursor to form. General techniques for achieving surface roughness include reactive ion etching, inert ion milling, and chemical mechanical polishing, each of which may be used to pattern the bottom electrode. The chemistry of the substrate is characterized by surface deposition by alloy deposition, deposition of a seed layer partially or completely internally diffused, and ion implantation with or without heat treatment, and by pre-exposure of the surface to a chemical agent prior to deposition. It can also be modified by changing its chemical properties. The resulting oxide ferroelectric thin film is suitable for use in capacitors, memory devices, and the like. |
| priorityDate | 1997-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 65.