http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20010032498-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-165 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-046 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-165 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76805 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76871 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76862 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76844 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2855 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76883 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76865 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 1998-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2001-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20010032498-A |
| titleOfInvention | Damage-free sculptured coating deposition |
| abstract | According to the present invention, the surface to which the capturer layer is applied is protected in order to resist corrosion and contamination by the impact ions of the deposition layer, and a method of applying a capturer layer of material onto the semiconductor feature surface using ion deposition sputtering, The method comprises the steps of: a) applying a first portion of the capture layer with a sufficiently low substrate bias such that the surface to which the capture layer is applied is not corroded or contaminated in an amount detrimental to semiconductor feature performance or lifetime, and b) further And depositing a layer material, while applying a subsequent portion of the capture layer with a substrate bias that is high enough to capture in one form from the first portion. The method is particularly applicable to the scoring of barrier layers, wetting layers and conductive layers on semiconductor feature surfaces and is particularly helpful when the conductive layer is copper. When applying the barrier layer, the first portion of the barrier layer material may have a substrate bias voltage that is low enough (even when no substrate voltage is applied) such that the surfaces impinged by the ions are not sputtered in an amount detrimental to device performance or lifetime. As such, it is deposited on the substrate surface using standard sputtering techniques or ion deposition plasma. Thereafter, the second portion of the barrier material causes ion deposition at an increased substrate bias voltage that allows for more anisotropic deposition of the new deposition material while causing resputtering (scatchering) of the first portion of the barrier layer material. It is applied using sputtering. The conductive material, and in particular the copper seed layer applied as a feature, can be accomplished using the same sketching technique as described above for the barrier layer. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9953867-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014157883-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101427140-B1 |
| priorityDate | 1997-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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