| abstract |
The present invention relates to damascene interconnects that include a double etch stop / dispersion shield. The conductive material of the damascene interconnect is typically overlaid with a conductive metal dispersion protective cap using non-electrical deposition, optionally with a dielectric etch-stop layer. Optionally, a chemical mechanical polishing-stop layer may be present. Several methods of the present invention allow for CMP stops, reactive-ion etch stops, and metal dispersion defense needs for different layers to be decoupled. Suitable conductive material is copper. |