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filingDate 1999-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f241799d2cc49accc7d0194a9e80d04c
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publicationDate 2001-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20010027005-A
titleOfInvention Organic chemical used in semiconductor device process
abstract Purpose: In the case of using copper as metal wiring, an organic compound for manufacturing a semiconductor device for removing etching residues or polishing operation including copper metal in order to form a metal wiring region by laminating and etching copper metal. It is about.n n n Composition: 10% to 80% by weight of at least one alkanolamine, R1 and R2, which may be mixed with 5% to 50% by weight of hydroxylamine and hydroxylamine, in H, tbutyl, OH or COOH The first compound having a first formula to select one and R3 is a second compound having a second formula to select one of OH or COOH and R4, R5, R6 and R7 are each selected from H or NH4 and its ammonium salt Up to about 30% by weight of an effective amount selected from the group consisting of third compounds having the third formula which is ethylenediamine tetracarboxylic acid and water.n n n Effect: When forming a metal wiring region by using copper, only the copper metal can be etched without affecting the film quality other than the copper metal, and polishing can be performed including the copper metal.
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