http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20010021740-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-763 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31612 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02255 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0647 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8222 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76202 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-082 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-763 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8222 |
| filingDate | 1998-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2001-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20010021740-A |
| titleOfInvention | A process for manufacturing ic-components to be used at radio frequencies |
| abstract | NPN-type bipolar transistors have an active region on the surface of the device surrounded by thick field oxide regions 18 along the surface of the device in a conventional manner. The active region is preferably partially covered by an electrically insulating surface layer comprising a nitride layer 34. The base region in the active region is formed by well-defined cavities created by lithography on the electrically insulating surface layer. Instead, in a PNP type bipolar side transistor having emitter and collector regions surrounded by such thick field oxide regions, the emitter and collector regions are formed in a corresponding manner by cavities formed by lithography on the electrically insulating surface layer. Can be. Due to the well-defined cavities, the base collector capacitance and the emitter collector capacitance can each be reduced in this case and result in better high frequency characteristics of the transistor. The region of silicon nitride layer 34 is used simultaneously as an effective dielectric in a capacitor manufactured at the same time. NPN transistors may be provided with thin side strings made of nitride for isolation between emitter connections and base connections. On the same semiconductor plate, special deep and shallow substrate connection terminals can be provided to electrically insulate the device region. Trench 22 may be used for electrical isolation of the device region and may have a stack of underlying oxide 23 and nitride 25 thereon on the sidewalls to facilitate planarization etching and to act as a diffusion barrier. have. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210053139-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101131320-B1 |
| priorityDate | 1997-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 58.