| abstract |
In the present invention, when a chip or CSP is tested in a wafer state, good contact with an electrode pad of each chip or CSP is always obtained without using a multilayer ceramic substrate or anisotropic conductive rubber, or it can correspond to a narrow electrode pitch. Another object of the present invention is to provide a test method of a wafer on which a probe card and a plurality of semiconductor devices excellent in durability at high temperatures are formed. A probe card for testing a wafer on which a plurality of semiconductor chips are formed, the probe card comprising: a flexible substrate, a contact electrode formed on a surface of the flexible substrate, the contact electrode provided at a position corresponding to the position of the electrode of the chip, and one end connected to the contact electrode; A first wiring having the other end guided around the contact electrode, a multilayer substrate provided on the flexible substrate opposite the wafer, an internal terminal provided on the multilayer substrate, and provided around the multilayer substrate A terminal provided with an external terminal connected by a terminal and a second wiring, and a third wiring having one end connected to the external terminal and the other end connected to an external connection terminal, wherein the first wiring is connected between the flexible substrate and the multilayer substrate. It is guided to the connecting terminal located at the other end beyond the step is joined to the internal terminal The problem is solved by the lobe card. |