| abstract |
The present invention relates to a compound that can be used as an additive to ensure the post exposure delay stability of the photoresist and a photoresist composition comprising the same, in the present invention has a suitable level of basic urea of formula (1) (urea) compounds are introduced as additives to reduce the effects of amines present in the external atmosphere, thereby reducing the effects of KrF (248 nm), ArF (193 nm), electron beams (E-beams), ion beams, and EUV (extremely ultra violet). In the lithography process using a light source such as), it is possible to effectively prevent the pattern from being formed or the T-top from being formed by the post-exposure delay, which is a problem of the alicyclic compound used as the photoresist.n n n [Formula 1]n n n n n n n n Wheren n n A, R, R 1 to R 7 are as defined in the specification. |