http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20010018056-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31122 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate | 1999-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e164adfc3f783bbf3ce28788f562bc8 |
| publicationDate | 2001-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20010018056-A |
| titleOfInvention | Method of dry etching for SBT thin film |
| abstract | Disclosed is a dry etching method of an SBT thin film mainly used in manufacturing ferroelectric capacitors. The dry etching method of the SBT thin film comprises the steps of forming a protective layer to expose the surface to be etched on the SBT thin film provided on the substrate, mounting the substrate in the etching chamber, maintaining the pressure inside the etching chamber within the set range, etching And etching the SBT thin film in a desired pattern while injecting an etched mixed gas in which chlorine gas, fluorocarbon gas, and argon gas are mixed in a predetermined ratio into the chamber to make a plasma state. According to the dry etching method of the SBT thin film, the chlorine gas, the fluorocarbon gas and the argon gas are appropriately mixed and used as the etching gas, whereby the SBT thin film is highly etch selectivity by the reactive etchers generated in the plasma state. By etching while suppressing the re-layering of the reaction products at the etching gradient, a clean SBT thin film can be obtained along the desired etching pattern. |
| priorityDate | 1999-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.