| abstract |
Disclosed are an integrated circuit, a semiconductor device, and a method of manufacturing the same. Each embodiment shows a diffusion doped backing layer bonded to a handling wafer by an oxide in the device wafer. The diffusion layer may begin with a device wafer, a handling wafer, a bonded oxide or an additional semiconductor layer such as polysilicon or epitaxial silicon. The process according to the invention can use thermal bonding oxides or combinations of thermal oxides and deposition oxides. |