| abstract |
The present invention is to prevent the reflection of the lower layer layer in the ultra-fine pattern forming process using a photoresist for lithography using 248 nm KrF, 193 nm ArF and 157 nm F 2 laser during the semiconductor device manufacturing process and to prevent the reflection of ArF light and photoresist itself. The present invention relates to an organic anti-reflective polymer capable of removing standing waves in thickness change and a method for synthesizing the same, and the present invention also relates to an anti-reflective composition containing such an organic anti-reflective polymer, an anti-reflective film using the same, and a method of manufacturing the same. When the polymer according to the present invention is used as an anti-reflection film in an ultra-fine pattern forming process in a semiconductor manufacturing process, it eliminates CD fluctuations resulting from standing waves, reflections and underlying films due to variations in optical properties and resist thickness of the underlying film layer on the wafer. As a result, stable ultrafine patterns of 64M, 256M, 1G, 4G, and 16G DRAMs can be formed, thereby increasing product yield. |