http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20000076838-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F04D25-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-32341 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02647 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06F1-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-025 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02642 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06F3-03543 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2000-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2000-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20000076838-A |
| titleOfInvention | Iii-v compound semiconductor |
| abstract | In the case of the formula In u Ga v Al w N (u + v + w = 1, 0 u 1, 0 v 1, 0 w 1 group III-V compound semiconductor, a layer formed from the first III-V group compound semiconductor represented by the formula (1) And a pattern formed on the first III-V group compound semiconductor and the pattern, a compound represented by the general formula In x Ga y Al z N (x + y + z = 1, 0 x 1, 0 y 1, 0 z V group compound semiconductor having a layer formed from a second III-V compound semiconductor represented by the following formula (1), wherein (0004) a reflection X-ray rocking curve of the second III-V compound semiconductor a group III-V compound semiconductor is provided wherein the width (FWHM) at half the maximum value in the reflection X-ray rocking curve is 700 seconds or less irrespective of the X-ray incidence direction. The III-V compound semiconductors, which are high-quality semiconductors, are inhibited from generating low angle grain boundaries. |
| priorityDate | 1999-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 67.