http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20000076668-A

Outgoing Links

Predicate Object
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09F2013-225
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B60Q3-85
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B60Q3-88
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09F13-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09F13-044
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
filingDate 2000-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2000-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20000076668-A
titleOfInvention Method for making of semiconductor device
abstract In order to reduce the inter-wiring capacity, the problem of using Xerogel or fluorine resin in the interlayer insulating film between wirings, the problem in case of misalignment, etc. are solved to form a highly reliable wiring structure. A manufacturing method of a semiconductor device is provided.n n n In the method for manufacturing a semiconductor device having an interlayer insulating film 12 including a xerogel film or a fluororesin film, the lower layer of the interlayer insulating film 12 is formed of an organic film, and the upper layer of the interlayer insulating film 12 is a xerogel film. Alternatively, on the interlayer insulating film 12 formed of the fluororesin film, the first mask 25 serving as an etching mask when the interlayer insulating film 12 is etched to form the via contact hole 26 is formed. And a second mask 21 having a material different from that of the first mask 25 by forming the wiring groove 27 by etching the interlayer insulating film 12 on the first mask 25. It is a manufacturing method provided with the process of forming ().
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7531450-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7488687-B2
priorityDate 1999-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID142154
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID451471871
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID139070
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID414867689
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID8263
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID407155265
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6327157
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID2775847
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID416187080
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24556
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419544406
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559562
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID415712843
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6373
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID70434
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID11194
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419593449
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6431
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419546198
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID25135
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID426098968
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419556964
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID74123
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID17358
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419543920
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID14917
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419527022
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419520721
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419517548
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID14009063

Total number of triples: 45.