| abstract |
The present invention relates to an organometallic complex of Chemical Formula 1, a method for preparing the same, and an organometallic chemical vapor deposition method using the same. Since the organometallic complex of the present invention has high thermal stability and excellent vaporization properties even at low temperatures, the organometallic chemical vapor deposition method (MOCVD, metal organic chemical vapor deposition) can be used to efficiently produce a thin film.n n n n n n n n n n (Wherein M, m, R 1 , R 2 , R 3 , and R 4 are as defined in the specification). |